Agertech ATM2N65TE is a ATM2N65TE from Agertech, part of the MOSFETs. It is designed for 650V 2A 3.9Ω@10V,1A 28W 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 2A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9Ω@10V,1A
- Power Dissipation (Pd): 28W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 9pF@15V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 320pF@25V
- Total Gate Charge (Qg@Vgs): 45nC@10V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.487 grams.
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Full Specifications of ATM2N65TE
| Model Number | ATM2N65TE |
| Model Name | Agertech ATM2N65TE |
| Category | MOSFETs |
| Brand | Agertech |
| Description | 650V 2A 3.9Ω@10V,1A 28W 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.487 grams / 0.017178 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.9Ω@10V,1A |
| Power Dissipation (Pd) | 28W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF@15V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 320pF@25V |
| Total Gate Charge (Qg@Vgs) | 45nC@10V |
| Operating Temperature | - |