HARRIS 2N1613 is a 2N1613 from HARRIS, part of the Bipolar Transistors - BJT. It is designed for 30V 800mW 40@150mA,10V 500mA NPN TO-39(TO-205AD) Bipolar Transistors - BJT ROHS. This product comes in a TO-39(TO-205AD) package and is sold as Bag-packed. Key features include:
- Collector Cut-Off Current (Icbo): 10nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Power Dissipation (Pd): 800mW
- DC Current Gain (hFE@Ic,Vce): 40@150mA,10V
- Collector Current (Ic): 500mA
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.5V@150mA,15mA
- Operating Temperature: -65℃~+200℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on 2N1613
Full Specifications of 2N1613
| Model Number | 2N1613 |
| Model Name | HARRIS 2N1613 |
| Category | Bipolar Transistors - BJT |
| Brand | HARRIS |
| Description | 30V 800mW 40@150mA,10V 500mA NPN TO-39(TO-205AD) Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-39(TO-205AD) |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 10nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Power Dissipation (Pd) | 800mW |
| DC Current Gain (hFE@Ic,Vce) | 40@150mA,10V |
| Collector Current (Ic) | 500mA |
| Transition Frequency (fT) | - |
| Transistor Type | NPN |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.5V@150mA,15mA |
| Operating Temperature | -65℃~+200℃@(Tj) |
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