HARRIS 2N5871 is a 2N5871 from HARRIS, part of the Bipolar Transistors - BJT. It is designed for 60V 115W 2.5@4A,20V 7A PNP TO-3 Bipolar Transistors - BJT ROHS. This product comes in a TO-3 package and is sold as Bag-packed. Key features include:
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Power Dissipation (Pd): 115W
- DC Current Gain (hFE@Ic,Vce): 2.5@4A,20V
- Collector Current (Ic): 7A
- Transition Frequency (fT): 4MHz
- Transistor Type: PNP
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on 2N5871
Full Specifications of 2N5871
| Model Number | 2N5871 |
| Model Name | HARRIS 2N5871 |
| Category | Bipolar Transistors - BJT |
| Brand | HARRIS |
| Description | 60V 115W 2.5@4A,20V 7A PNP TO-3 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-3 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | - |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Power Dissipation (Pd) | 115W |
| DC Current Gain (hFE@Ic,Vce) | 2.5@4A,20V |
| Collector Current (Ic) | 7A |
| Transition Frequency (fT) | 4MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | - |
| Transistor Type | PNP |
| Operating Temperature | - |
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