2N6739 by HARRIS – Specifications

HARRIS 2N6739 is a 2N6739 from HARRIS, part of the Bipolar Transistors - BJT. It is designed for 350V 100W 10@5A,3V 8A NPN TO-220AB Bipolar Transistors - BJT ROHS. This product comes in a TO-220AB package and is sold as Bag-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 350V
  • Power Dissipation (Pd): 100W
  • DC Current Gain (hFE@Ic,Vce): 10@5A,3V
  • Collector Current (Ic): 8A
  • Transition Frequency (fT): 60MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2V@8A,4A
  • Transistor Type: NPN
  • Operating Temperature: -65℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of 2N6739

Model Number2N6739
Model NameHARRIS 2N6739
CategoryBipolar Transistors - BJT
BrandHARRIS
Description350V 100W 10@5A,3V 8A NPN TO-220AB Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220AB
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100uA
Collector-Emitter Breakdown Voltage (Vceo)350V
Power Dissipation (Pd)100W
DC Current Gain (hFE@Ic,Vce)10@5A,3V
Collector Current (Ic)8A
Transition Frequency (fT)60MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)2V@8A,4A
Transistor TypeNPN
Operating Temperature-65℃~+150℃@(Tj)

Compare HARRIS - 2N6739 With Other 119 Models

Related Models - 2N6739 Alternative

Scroll to Top