BDX33DS by HARRIS – Specifications

HARRIS BDX33DS is a BDX33DS from HARRIS, part of the Darlington Transistors. It is designed for 750@3A,3V 120V NPN 10A 2W TO-220 Darlington Transistors ROHS. This product comes in a TO-220 package and is sold as Bag-packed. Key features include:

  • DC current gain (hFE@Vce,Ic): 750@3A,3V
  • Collector-emitter voltage (Vceo): 120V
  • Transistor Type: NPN
  • Collector cut-off current (Icbo@Vcb): 500uA
  • Collector Current (Ic): 10A
  • Operating Temperature: -65℃~+150℃@(Tj)
  • Power Dissipation (Pd): 2W
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.5V@6mA,3A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of BDX33DS

Model NumberBDX33DS
Model NameHARRIS BDX33DS
CategoryDarlington Transistors
BrandHARRIS
Description750@3A,3V 120V NPN 10A 2W TO-220 Darlington Transistors ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
DC current gain (hFE@Vce,Ic)750@3A,3V
Collector-emitter voltage (Vceo)120V
Transistor TypeNPN
Transition frequency (fT)-
Collector cut-off current (Icbo@Vcb)500uA
Collector Current (Ic)10A
Operating Temperature-65℃~+150℃@(Tj)
Power Dissipation (Pd)2W
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)2.5V@6mA,3A

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