D64VS4 by HARRIS – Specifications

HARRIS D64VS4 is a D64VS4 from HARRIS, part of the Bipolar Transistors - BJT. It is designed for 350V 195W 10@10A,2V 15A NPN TO-3 Bipolar Transistors - BJT ROHS. This product comes in a TO-3 package and is sold as Bag-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 350V
  • Power Dissipation (Pd): 195W
  • DC Current Gain (hFE@Ic,Vce): 10@10A,2V
  • Collector Current (Ic): 15A
  • Transition Frequency (fT): 50MHz
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@15A,2.5A
  • Operating Temperature: -65℃~+200℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of D64VS4

Model NumberD64VS4
Model NameHARRIS D64VS4
CategoryBipolar Transistors - BJT
BrandHARRIS
Description350V 195W 10@10A,2V 15A NPN TO-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100uA
Collector-Emitter Breakdown Voltage (Vceo)350V
Power Dissipation (Pd)195W
DC Current Gain (hFE@Ic,Vce)10@10A,2V
Collector Current (Ic)15A
Transition Frequency (fT)50MHz
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@15A,2.5A
Operating Temperature-65℃~+200℃@(Tj)

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