HY4008B by HUAYI – Specifications

HUAYI HY4008B is a HY4008B from HUAYI, part of the MOSFETs. It is designed for 80V 200A 345W 3.5mΩ@10V,100A 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 200A
  • Power Dissipation (Pd): 345W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5mΩ@10V,100A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.638 grams.

Full Specifications of HY4008B

Model NumberHY4008B
Model NameHUAYI HY4008B
CategoryMOSFETs
BrandHUAYI
Description80V 200A 345W 3.5mΩ@10V,100A 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.638 grams / 0.057779 oz
Package / CaseTO-263-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)200A
Power Dissipation (Pd)345W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.5mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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