Infineon Technologies IRF540NPBF is a IRF540NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 33A 44mΩ@10V,16A 130W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 33A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 44mΩ@10V,16A
- Power Dissipation (Pd): 130W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.96nF@25V
- Total Gate Charge (Qg@Vgs): 71nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.76 grams.
More on IRF540NPBF
Full Specifications of IRF540NPBF
| Model Number | IRF540NPBF |
| Model Name | Infineon Technologies IRF540NPBF |
| Category | MOSFETs |
| Brand | Infineon Technologies |
| Description | 100V 33A 44mΩ@10V,16A 130W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.760 grams / 0.097356 oz |
| Package / Case | TO-220AB |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 33A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 44mΩ@10V,16A |
| Power Dissipation (Pd) | 130W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.96nF@25V |
| Total Gate Charge (Qg@Vgs) | 71nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |