3DD13003A-126 by Jilin Sino-Microelectronics – Specifications

Jilin Sino-Microelectronics 3DD13003A-126 is a 3DD13003A-126 from Jilin Sino-Microelectronics, part of the Bipolar Transistors - BJT. It is designed for 450V 20W 20@5mA,5V 1.5A NPN TO-126 Bipolar Transistors - BJT ROHS. This product comes in a TO-126 package and is sold as Bag-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 450V
  • Power Dissipation (Pd): 20W
  • DC Current Gain (hFE@Ic,Vce): 20@5mA,5V
  • Collector Current (Ic): 1.5A
  • Transition Frequency (fT): 4MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): [email protected],500mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.64 grams.

More on 3DD13003A-126

Full Specifications of 3DD13003A-126

Model Number3DD13003A-126
Model NameJilin Sino-Microelectronics 3DD13003A-126
CategoryBipolar Transistors - BJT
BrandJilin Sino-Microelectronics
Description450V 20W 20@5mA,5V 1.5A NPN TO-126 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.640 grams / 0.022575 oz
Package / CaseTO-126
Package / ArrangeBag-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100uA
Collector-Emitter Breakdown Voltage (Vceo)450V
Power Dissipation (Pd)20W
DC Current Gain (hFE@Ic,Vce)20@5mA,5V
Collector Current (Ic)1.5A
Transition Frequency (fT)4MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)[email protected],500mA
Transistor TypeNPN
Operating Temperature-

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