3DD13005ED-220HF by Jilin Sino-Microelectronics – Specifications

Jilin Sino-Microelectronics 3DD13005ED-220HF is a 3DD13005ED-220HF from Jilin Sino-Microelectronics, part of the Bipolar Transistors - BJT. It is designed for 400V 40W 20@500mA,10V 4A NPN ITO-220AB-3 Bipolar Transistors - BJT ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Power Dissipation (Pd): 40W
  • DC Current Gain (hFE@Ic,Vce): 20@500mA,10V
  • Collector Current (Ic): 4A
  • Transition Frequency (fT): 4MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@2A,400mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.3 grams.

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Full Specifications of 3DD13005ED-220HF

Model Number3DD13005ED-220HF
Model NameJilin Sino-Microelectronics 3DD13005ED-220HF
CategoryBipolar Transistors - BJT
BrandJilin Sino-Microelectronics
Description400V 40W 20@500mA,10V 4A NPN ITO-220AB-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.300 grams / 0.08113 oz
Package / CaseITO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100uA
Collector-Emitter Breakdown Voltage (Vceo)400V
Power Dissipation (Pd)40W
DC Current Gain (hFE@Ic,Vce)20@500mA,10V
Collector Current (Ic)4A
Transition Frequency (fT)4MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@2A,400mA
Transistor TypeNPN
Operating Temperature-

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