3DD13005MD-220 by Jilin Sino-Microelectronics – Specifications

Jilin Sino-Microelectronics 3DD13005MD-220 is a 3DD13005MD-220 from Jilin Sino-Microelectronics, part of the Bipolar Transistors - BJT. It is designed for 400V 75W 8@500mA,10V 4A NPN TO-220 Bipolar Transistors - BJT ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Power Dissipation (Pd): 75W
  • DC Current Gain (hFE@Ic,Vce): 8@500mA,10V
  • Collector Current (Ic): 4A
  • Transition Frequency (fT): 4MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2V@4A,1A
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.76 grams.

More on 3DD13005MD-220

Full Specifications of 3DD13005MD-220

Model Number3DD13005MD-220
Model NameJilin Sino-Microelectronics 3DD13005MD-220
CategoryBipolar Transistors - BJT
BrandJilin Sino-Microelectronics
Description400V 75W 8@500mA,10V 4A NPN TO-220 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.760 grams / 0.097356 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100uA
Collector-Emitter Breakdown Voltage (Vceo)400V
Power Dissipation (Pd)75W
DC Current Gain (hFE@Ic,Vce)8@500mA,10V
Collector Current (Ic)4A
Transition Frequency (fT)4MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)2V@4A,1A
Transistor TypeNPN
Operating Temperature-

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