3DD4243DM-126 by Jilin Sino-Microelectronics – Specifications

Jilin Sino-Microelectronics 3DD4243DM-126 is a 3DD4243DM-126 from Jilin Sino-Microelectronics, part of the Bipolar Transistors - BJT. It is designed for 400V 20W 22@200mA,5V 2A NPN TO-126 Bipolar Transistors - BJT ROHS. This product comes in a TO-126 package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 5uA
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Power Dissipation (Pd): 20W
  • DC Current Gain (hFE@Ic,Vce): 22@200mA,5V
  • Collector Current (Ic): 2A
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.1V@2A,400mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.1 grams.

More on 3DD4243DM-126

Full Specifications of 3DD4243DM-126

Model Number3DD4243DM-126
Model NameJilin Sino-Microelectronics 3DD4243DM-126
CategoryBipolar Transistors - BJT
BrandJilin Sino-Microelectronics
Description400V 20W 22@200mA,5V 2A NPN TO-126 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.100 grams / 0.038801 oz
Package / CaseTO-126
Package / ArrangeTube-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)5uA
Collector-Emitter Breakdown Voltage (Vceo)400V
Power Dissipation (Pd)20W
DC Current Gain (hFE@Ic,Vce)22@200mA,5V
Collector Current (Ic)2A
Transition Frequency (fT)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1.1V@2A,400mA
Transistor TypeNPN
Operating Temperature-

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