3DD4244DM by Jilin Sino-Microelectronics – Specifications

Jilin Sino-Microelectronics 3DD4244DM is a 3DD4244DM from Jilin Sino-Microelectronics, part of the Bipolar Transistors - BJT. It is designed for 400V 30W 20@500mA,5V 3A NPN TO-126 Bipolar Transistors - BJT ROHS. This product comes in a TO-126 package and is sold as Bag-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 5uA
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Power Dissipation (Pd): 30W
  • DC Current Gain (hFE@Ic,Vce): 20@500mA,5V
  • Collector Current (Ic): 3A
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): [email protected],500mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.683 grams.

More on 3DD4244DM

Full Specifications of 3DD4244DM

Model Number3DD4244DM
Model NameJilin Sino-Microelectronics 3DD4244DM
CategoryBipolar Transistors - BJT
BrandJilin Sino-Microelectronics
Description400V 30W 20@500mA,5V 3A NPN TO-126 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.683 grams / 0.024092 oz
Package / CaseTO-126
Package / ArrangeBag-packed
BatteryNo
ECCN
Collector Cut-Off Current (Icbo)5uA
Collector-Emitter Breakdown Voltage (Vceo)400V
Power Dissipation (Pd)30W
DC Current Gain (hFE@Ic,Vce)20@500mA,5V
Collector Current (Ic)3A
Transition Frequency (fT)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)[email protected],500mA
Transistor TypeNPN
Operating Temperature-

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