3DD4612DT-92 by Jilin Sino-Microelectronics – Specifications

Jilin Sino-Microelectronics 3DD4612DT-92 is a 3DD4612DT-92 from Jilin Sino-Microelectronics, part of the Bipolar Transistors - BJT. It is designed for 450V 1W 22@100mA,10V 1.5A NPN TO-92-3 Bipolar Transistors - BJT ROHS. This product comes in a TO-92-3 package and is sold as Bag-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 450V
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE@Ic,Vce): 22@100mA,10V
  • Collector Current (Ic): 1.5A
  • Transition Frequency (fT): 4MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@500mA,100mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.336 grams.

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Full Specifications of 3DD4612DT-92

Model Number3DD4612DT-92
Model NameJilin Sino-Microelectronics 3DD4612DT-92
CategoryBipolar Transistors - BJT
BrandJilin Sino-Microelectronics
Description450V 1W 22@100mA,10V 1.5A NPN TO-92-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.336 grams / 0.011852 oz
Package / CaseTO-92-3
Package / ArrangeBag-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)450V
Power Dissipation (Pd)1W
DC Current Gain (hFE@Ic,Vce)22@100mA,10V
Collector Current (Ic)1.5A
Transition Frequency (fT)4MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@500mA,100mA
Transistor TypeNPN
Operating Temperature-

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