MASPOWER MS18N100HGC0 is a MS18N100HGC0 from MASPOWER, part of the MOSFETs. It is designed for 1kV 18A 470W 550mΩ@10V,9A 4V@250μA 1PCSNChannel TO-247 MOSFETs ROHS. This product comes in a TO-247 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 1kV
- Continuous Drain Current (Id): 18A
- Power Dissipation (Pd): 470W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 550mΩ@10V,9A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250μA
- Reverse Transfer Capacitance (Crss@Vds): 30pF
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.85nF
- Total Gate Charge (Qg@Vgs): 66.64nC
- Operating Temperature: -55℃~+175℃
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.67 grams.
More on MS18N100HGC0
Full Specifications of MS18N100HGC0
Model Number | MS18N100HGC0 |
Model Name | MASPOWER MS18N100HGC0 |
Category | MOSFETs |
Brand | MASPOWER |
Description | 1kV 18A 470W 550mΩ@10V,9A 4V@250μA 1PCSNChannel TO-247 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 7.670 grams / 0.270552 oz |
Package / Case | TO-247 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | |
Drain Source Voltage (Vdss) | 1kV |
Continuous Drain Current (Id) | 18A |
Power Dissipation (Pd) | 470W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 550mΩ@10V,9A |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250μA |
Reverse Transfer Capacitance (Crss@Vds) | 30pF |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.85nF |
Total Gate Charge (Qg@Vgs) | 66.64nC |
Operating Temperature | -55℃~+175℃ |