Minos IRF640 is a IRF640 from Minos, part of the MOSFETs. It is designed for 200V 18A 130mΩ@10V,7.5A 31W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@10V,7.5A
- Power Dissipation (Pd): 31W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 130pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.32nF@25V
- Total Gate Charge (Qg@Vgs): 23nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.733 grams.
More on IRF640
Full Specifications of IRF640
| Model Number | IRF640 |
| Model Name | Minos IRF640 |
| Category | MOSFETs |
| Brand | Minos |
| Description | 200V 18A 130mΩ@10V,7.5A 31W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.733 grams / 0.096404 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 18A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 130mΩ@10V,7.5A |
| Power Dissipation (Pd) | 31W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.32nF@25V |
| Total Gate Charge (Qg@Vgs) | 23nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
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