onsemi FCD4N60TM is a FCD4N60TM from onsemi, part of the MOSFETs. It is designed for 600V 3.9A 50W 1.2Ω@10V,2A 5V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS. This product comes in a TO-252AA package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 3.9A
- Power Dissipation (Pd): 50W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,2A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 540pF@25V
- Total Gate Charge (Qg@Vgs): 16.6nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.368 grams.
More on FCD4N60TM
Full Specifications of FCD4N60TM
| Model Number | FCD4N60TM |
| Model Name | onsemi FCD4N60TM |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 3.9A 50W 1.2Ω@10V,2A 5V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.368 grams / 0.012981 oz |
| Package / Case | TO-252AA |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 3.9A |
| Power Dissipation (Pd) | 50W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.2Ω@10V,2A |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 540pF@25V |
| Total Gate Charge (Qg@Vgs) | 16.6nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |