onsemi FCH070N60E is a FCH070N60E from onsemi, part of the MOSFETs. It is designed for 600V 52A 481W 70mΩ@26A,10V 3.5V@250uA 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 52A
- Power Dissipation (Pd): 481W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 70mΩ@26A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.925nF@380V
- Total Gate Charge (Qg@Vgs): 166nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.2 grams.
More on FCH070N60E
Full Specifications of FCH070N60E
| Model Number | FCH070N60E |
| Model Name | onsemi FCH070N60E |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 52A 481W 70mΩ@26A,10V 3.5V@250uA 1PCSNChannel TO-247-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 7.200 grams / 0.253973 oz |
| Package / Case | TO-247-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 52A |
| Power Dissipation (Pd) | 481W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 70mΩ@26A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 4.925nF@380V |
| Total Gate Charge (Qg@Vgs) | 166nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |