onsemi FCI11N60 is a FCI11N60 from onsemi, part of the MOSFETs. It is designed for 600V 11A 380mΩ@5.5A,10V 125W 5V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS. This product comes in a I2PAK(TO-262) package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 11A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@5.5A,10V
- Power Dissipation (Pd): 125W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.49nF@25V
- Total Gate Charge (Qg@Vgs): 52nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FCI11N60
Full Specifications of FCI11N60
| Model Number | FCI11N60 |
| Model Name | onsemi FCI11N60 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 11A 380mΩ@5.5A,10V 125W 5V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | I2PAK(TO-262) |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 11A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 380mΩ@5.5A,10V |
| Power Dissipation (Pd) | 125W |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.49nF@25V |
| Total Gate Charge (Qg@Vgs) | 52nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
Compare onsemi - FCI11N60 With Other 200 Models
Related Models - FCI11N60 Alternative
- onsemi FQA7N90
- onsemi FQA6N90
- onsemi FQA7N80
- onsemi FQA34N20L
- onsemi IRFP460C
- onsemi IRFP350A
- onsemi FQA6N80
- onsemi FQA15N70
- onsemi FQA9N50
- onsemi HUF75344A3