IRFP350A by onsemi – Specifications

onsemi IRFP350A is a IRFP350A from onsemi, part of the MOSFETs. It is designed for 400V 17A 202W 300mΩ@8.5A,10V 4V@250uA 1PCSNChannel TO-3P MOSFETs ROHS. This product comes in a TO-3P package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 400V
  • Continuous Drain Current (Id): 17A
  • Power Dissipation (Pd): 202W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 300mΩ@8.5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.78nF@25V
  • Total Gate Charge (Qg@Vgs): 131nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFP350A

Model NumberIRFP350A
Model Nameonsemi IRFP350A
CategoryMOSFETs
Brandonsemi
Description400V 17A 202W 300mΩ@8.5A,10V 4V@250uA 1PCSNChannel TO-3P MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-3P
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)400V
Continuous Drain Current (Id)17A
Power Dissipation (Pd)202W
Drain Source On Resistance (RDS(on)@Vgs,Id)300mΩ@8.5A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.78nF@25V
Total Gate Charge (Qg@Vgs)131nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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