onsemi FCP11N60N is a FCP11N60N from onsemi, part of the MOSFETs. It is designed for 600V 10.8A 255mΩ@10V,5.4A 94W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 10.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 255mΩ@10V,5.4A
- Power Dissipation (Pd): 94W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 3pF@100V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.505nF@100V
- Total Gate Charge (Qg@Vgs): 35.6nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.
More on FCP11N60N
Full Specifications of FCP11N60N
| Model Number | FCP11N60N |
| Model Name | onsemi FCP11N60N |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 10.8A 255mΩ@10V,5.4A 94W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.680 grams / 0.094534 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 10.8A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 255mΩ@10V,5.4A |
| Power Dissipation (Pd) | 94W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF@100V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.505nF@100V |
| Total Gate Charge (Qg@Vgs) | 35.6nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |