onsemi FDA18N50 is a FDA18N50 from onsemi, part of the MOSFETs. It is designed for 500V 19A 239W 265mΩ@10V,9.5A 5V@250uA 1PCSNChannel TO-3P MOSFETs ROHS. This product comes in a TO-3P package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 19A
- Power Dissipation (Pd): 239W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 265mΩ@10V,9.5A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.86nF@25V
- Total Gate Charge (Qg@Vgs): 60nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.713 grams.
More on FDA18N50
Full Specifications of FDA18N50
| Model Number | FDA18N50 |
| Model Name | onsemi FDA18N50 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 500V 19A 239W 265mΩ@10V,9.5A 5V@250uA 1PCSNChannel TO-3P MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 7.713 grams / 0.272068 oz |
| Package / Case | TO-3P |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 500V |
| Continuous Drain Current (Id) | 19A |
| Power Dissipation (Pd) | 239W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 265mΩ@10V,9.5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2.86nF@25V |
| Total Gate Charge (Qg@Vgs) | 60nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |