onsemi FDA59N25 is a FDA59N25 from onsemi, part of the MOSFETs. It is designed for 250V 59A 392W 49mΩ@29.5A,10V 5V@250uA 1PCSNChannel TO-3PN-3 MOSFETs ROHS. This product comes in a TO-3PN-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 250V
- Continuous Drain Current (Id): 59A
- Power Dissipation (Pd): 392W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 49mΩ@29.5A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.02nF@25V
- Total Gate Charge (Qg@Vgs): 82nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.247 grams.
More on FDA59N25
Full Specifications of FDA59N25
| Model Number | FDA59N25 |
| Model Name | onsemi FDA59N25 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 250V 59A 392W 49mΩ@29.5A,10V 5V@250uA 1PCSNChannel TO-3PN-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 7.247 grams / 0.255631 oz |
| Package / Case | TO-3PN-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 250V |
| Continuous Drain Current (Id) | 59A |
| Power Dissipation (Pd) | 392W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 49mΩ@29.5A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 4.02nF@25V |
| Total Gate Charge (Qg@Vgs) | 82nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |