onsemi FDA59N30 is a FDA59N30 from onsemi, part of the MOSFETs. It is designed for 300V 59A 500W 56mΩ@10V,29.5A 5V@250uA 1PCSNChannel TO-3P MOSFETs ROHS. This product comes in a TO-3P package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 300V
- Continuous Drain Current (Id): 59A
- Power Dissipation (Pd): 500W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 56mΩ@10V,29.5A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.67nF@25V
- Total Gate Charge (Qg@Vgs): 100nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.066 grams.
More on FDA59N30
Full Specifications of FDA59N30
| Model Number | FDA59N30 |
| Model Name | onsemi FDA59N30 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 300V 59A 500W 56mΩ@10V,29.5A 5V@250uA 1PCSNChannel TO-3P MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 7.066 grams / 0.249246 oz |
| Package / Case | TO-3P |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 300V |
| Continuous Drain Current (Id) | 59A |
| Power Dissipation (Pd) | 500W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 56mΩ@10V,29.5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 4.67nF@25V |
| Total Gate Charge (Qg@Vgs) | 100nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |