FDB039N06 by onsemi – Specifications

onsemi FDB039N06 is a FDB039N06 from onsemi, part of the MOSFETs. It is designed for 60V 120A 3.9mΩ@75A,10V 231W 4.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@75A,10V
  • Power Dissipation (Pd): 231W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.235nF@25V
  • Total Gate Charge (Qg@Vgs): 133nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDB039N06

Model NumberFDB039N06
Model Nameonsemi FDB039N06
CategoryMOSFETs
Brandonsemi
Description60V 120A 3.9mΩ@75A,10V 231W 4.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.9mΩ@75A,10V
Power Dissipation (Pd)231W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.235nF@25V
Total Gate Charge (Qg@Vgs)133nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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