onsemi FDB088N08 is a FDB088N08 from onsemi, part of the MOSFETs. It is designed for 75V 85A 160W 8.8mΩ@10V,75A 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 75V
- Continuous Drain Current (Id): 85A
- Power Dissipation (Pd): 160W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8.8mΩ@10V,75A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 6.595nF@25V
- Total Gate Charge (Qg@Vgs): 118nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.632 grams.
More on FDB088N08
Full Specifications of FDB088N08
| Model Number | FDB088N08 |
| Model Name | onsemi FDB088N08 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 75V 85A 160W 8.8mΩ@10V,75A 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.632 grams / 0.057567 oz |
| Package / Case | D2PAK |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 75V |
| Continuous Drain Current (Id) | 85A |
| Power Dissipation (Pd) | 160W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.8mΩ@10V,75A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 6.595nF@25V |
| Total Gate Charge (Qg@Vgs) | 118nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |