FDB150N10 by onsemi – Specifications

onsemi FDB150N10 is a FDB150N10 from onsemi, part of the MOSFETs. It is designed for 100V 57A 12mΩ@10V,49A 110W 4.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 57A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,49A
  • Power Dissipation (Pd): 110W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 140pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.58nF@25V
  • Total Gate Charge (Qg@Vgs): 53nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.27 grams.

Full Specifications of FDB150N10

Model NumberFDB150N10
Model Nameonsemi FDB150N10
CategoryMOSFETs
Brandonsemi
Description100V 57A 12mΩ@10V,49A 110W 4.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.270 grams / 0.080072 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)57A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@10V,49A
Power Dissipation (Pd)110W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)140pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.58nF@25V
Total Gate Charge (Qg@Vgs)53nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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