FDB20N50F by onsemi – Specifications

onsemi FDB20N50F is a FDB20N50F from onsemi, part of the MOSFETs. It is designed for 500V 20A 260mΩ@10A,10V 250W 5V@250uA 1PCSNChannel TO-263(D2PAK) MOSFETs ROHS. This product comes in a TO-263(D2PAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 20A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 260mΩ@10A,10V
  • Power Dissipation (Pd): 250W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.39nF@25V
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.86 grams.

Full Specifications of FDB20N50F

Model NumberFDB20N50F
Model Nameonsemi FDB20N50F
CategoryMOSFETs
Brandonsemi
Description500V 20A 260mΩ@10A,10V 250W 5V@250uA 1PCSNChannel TO-263(D2PAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.860 grams / 0.06561 oz
Package / CaseTO-263(D2PAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)20A
Drain Source On Resistance (RDS(on)@Vgs,Id)260mΩ@10A,10V
Power Dissipation (Pd)250W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.39nF@25V
Total Gate Charge (Qg@Vgs)65nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - FDB20N50F With Other 200 Models

Related Models - FDB20N50F Alternative

Scroll to Top