FDB2614 by onsemi – Specifications

onsemi FDB2614 is a FDB2614 from onsemi, part of the MOSFETs. It is designed for 200V 62A 22.9mΩ@10V,31A 260W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 62A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 22.9mΩ@10V,31A
  • Power Dissipation (Pd): 260W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 110pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.435nF@25V
  • Total Gate Charge (Qg@Vgs): 76nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.8 grams.

Full Specifications of FDB2614

Model NumberFDB2614
Model Nameonsemi FDB2614
CategoryMOSFETs
Brandonsemi
Description200V 62A 22.9mΩ@10V,31A 260W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.800 grams / 0.063493 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)62A
Drain Source On Resistance (RDS(on)@Vgs,Id)22.9mΩ@10V,31A
Power Dissipation (Pd)260W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)110pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.435nF@25V
Total Gate Charge (Qg@Vgs)76nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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