onsemi FDB3632 is a FDB3632 from onsemi, part of the MOSFETs. It is designed for 100V 9mΩ@80A,10V 310W 4V@250uA 1PCSNChannel D2PAK-3 MOSFETs ROHS. This product comes in a D2PAK-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 12A;80A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@80A,10V
- Power Dissipation (Pd): 310W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 6nF@25V
- Total Gate Charge (Qg@Vgs): 110nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.27 grams.
More on FDB3632
Full Specifications of FDB3632
| Model Number | FDB3632 |
| Model Name | onsemi FDB3632 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 100V 9mΩ@80A,10V 310W 4V@250uA 1PCSNChannel D2PAK-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.270 grams / 0.080072 oz |
| Package / Case | D2PAK-3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 12A;80A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 9mΩ@80A,10V |
| Power Dissipation (Pd) | 310W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 6nF@25V |
| Total Gate Charge (Qg@Vgs) | 110nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |