FDB5690 by onsemi – Specifications

onsemi FDB5690 is a FDB5690 from onsemi, part of the MOSFETs. It is designed for 60V 32A 27mΩ@16A,10V 58W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 32A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 27mΩ@16A,10V
  • Power Dissipation (Pd): 58W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.12nF@25V
  • Total Gate Charge (Qg@Vgs): 33nC@10V
  • Operating Temperature: -65℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDB5690

Model NumberFDB5690
Model Nameonsemi FDB5690
CategoryMOSFETs
Brandonsemi
Description60V 32A 27mΩ@16A,10V 58W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)32A
Drain Source On Resistance (RDS(on)@Vgs,Id)27mΩ@16A,10V
Power Dissipation (Pd)58W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.12nF@25V
Total Gate Charge (Qg@Vgs)33nC@10V
Operating Temperature-65℃~+175℃@(Tj)

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