FDB5800 by onsemi – Specifications

onsemi FDB5800 is a FDB5800 from onsemi, part of the MOSFETs. It is designed for 60V 6mΩ@80A,10V 242W 2.5V@250uA 1PCSNChannel D2PAK-3 MOSFETs ROHS. This product comes in a D2PAK-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 14A;80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6mΩ@80A,10V
  • Power Dissipation (Pd): 242W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.625nF@15V
  • Total Gate Charge (Qg@Vgs): 135nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.7 grams.

Full Specifications of FDB5800

Model NumberFDB5800
Model Nameonsemi FDB5800
CategoryMOSFETs
Brandonsemi
Description60V 6mΩ@80A,10V 242W 2.5V@250uA 1PCSNChannel D2PAK-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.700 grams / 0.059966 oz
Package / CaseD2PAK-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)14A;80A
Drain Source On Resistance (RDS(on)@Vgs,Id)6mΩ@80A,10V
Power Dissipation (Pd)242W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.625nF@15V
Total Gate Charge (Qg@Vgs)135nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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