onsemi FDB8030L is a FDB8030L from onsemi, part of the MOSFETs. It is designed for 30V 80A 3.5mΩ@80A,10V 187W 2V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS. This product comes in a TO-263AB package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5mΩ@80A,10V
- Power Dissipation (Pd): 187W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 10.5nF@15V
- Total Gate Charge (Qg@Vgs): 170nC@5V
- Operating Temperature: -65℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDB8030L
Full Specifications of FDB8030L
| Model Number | FDB8030L |
| Model Name | onsemi FDB8030L |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 80A 3.5mΩ@80A,10V 187W 2V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-263AB |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 80A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.5mΩ@80A,10V |
| Power Dissipation (Pd) | 187W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 10.5nF@15V |
| Total Gate Charge (Qg@Vgs) | 170nC@5V |
| Operating Temperature | -65℃~+175℃@(Tj) |