FDB8442 by onsemi – Specifications

onsemi FDB8442 is a FDB8442 from onsemi, part of the MOSFETs. It is designed for 40V 2.9mΩ@80A,10V 254W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 28A;80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@80A,10V
  • Power Dissipation (Pd): 254W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 12.2nF@25V
  • Total Gate Charge (Qg@Vgs): 235nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDB8442

Model NumberFDB8442
Model Nameonsemi FDB8442
CategoryMOSFETs
Brandonsemi
Description40V 2.9mΩ@80A,10V 254W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)28A;80A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9mΩ@80A,10V
Power Dissipation (Pd)254W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)12.2nF@25V
Total Gate Charge (Qg@Vgs)235nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare onsemi - FDB8442 With Other 200 Models

Related Models - FDB8442 Alternative

Scroll to Top