FDB8444 by onsemi – Specifications

onsemi FDB8444 is a FDB8444 from onsemi, part of the MOSFETs. It is designed for 40V 70A 5.5mΩ@10V,70A 167W 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS. This product comes in a TO-263AB package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 70A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.5mΩ@10V,70A
  • Power Dissipation (Pd): 167W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.035nF@25V
  • Total Gate Charge (Qg@Vgs): 128nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.5 grams.

Full Specifications of FDB8444

Model NumberFDB8444
Model Nameonsemi FDB8444
CategoryMOSFETs
Brandonsemi
Description40V 70A 5.5mΩ@10V,70A 167W 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.500 grams / 0.088185 oz
Package / CaseTO-263AB
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)70A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.5mΩ@10V,70A
Power Dissipation (Pd)167W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.035nF@25V
Total Gate Charge (Qg@Vgs)128nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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