FDC855N by onsemi – Specifications

onsemi FDC855N is a FDC855N from onsemi, part of the MOSFETs. It is designed for 30V 6.1A 1.6W 27mΩ@10V,6.1A 3V@250uA 1PCSNChannel TSOP-6-1.5mm MOSFETs ROHS. This product comes in a TSOP-6-1.5mm package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6.1A
  • Power Dissipation (Pd): 1.6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 27mΩ@10V,6.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.025 grams.

Full Specifications of FDC855N

Model NumberFDC855N
Model Nameonsemi FDC855N
CategoryMOSFETs
Brandonsemi
Description30V 6.1A 1.6W 27mΩ@10V,6.1A 3V@250uA 1PCSNChannel TSOP-6-1.5mm MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.025 grams / 0.000882 oz
Package / CaseTSOP-6-1.5mm
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6.1A
Power Dissipation (Pd)1.6W
Drain Source On Resistance (RDS(on)@Vgs,Id)27mΩ@10V,6.1A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel

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