FDD2670 by onsemi – Specifications

onsemi FDD2670 is a FDD2670 from onsemi, part of the MOSFETs. It is designed for 200V 3.6A 130mΩ@3.6A,10V 4.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 3.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@3.6A,10V
  • Power Dissipation (Pd): 3.2W;70W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.228nF@100V
  • Total Gate Charge (Qg@Vgs): 43nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.085 grams.

Full Specifications of FDD2670

Model NumberFDD2670
Model Nameonsemi FDD2670
CategoryMOSFETs
Brandonsemi
Description200V 3.6A 130mΩ@3.6A,10V 4.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.085 grams / 0.002998 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)3.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)130mΩ@3.6A,10V
Power Dissipation (Pd)3.2W;70W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.228nF@100V
Total Gate Charge (Qg@Vgs)43nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - FDD2670 With Other 200 Models

Related Models - FDD2670 Alternative

Scroll to Top