onsemi FDD3570 is a FDD3570 from onsemi, part of the MOSFETs. It is designed for 80V 10A 20mΩ@10A,10V 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@10A,10V
- Power Dissipation (Pd): 3.4W;69W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.8nF@40V
- Total Gate Charge (Qg@Vgs): 76nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDD3570
Full Specifications of FDD3570
| Model Number | FDD3570 |
| Model Name | onsemi FDD3570 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 80V 10A 20mΩ@10A,10V 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-252(DPAK) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 80V |
| Continuous Drain Current (Id) | 10A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20mΩ@10A,10V |
| Power Dissipation (Pd) | 3.4W;69W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2.8nF@40V |
| Total Gate Charge (Qg@Vgs) | 76nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |