FDD3670 by onsemi – Specifications

onsemi FDD3670 is a FDD3670 from onsemi, part of the MOSFETs. It is designed for 100V 34A 32mΩ@7.3A,10V 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 34A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 32mΩ@7.3A,10V
  • Power Dissipation (Pd): 3.8W;83W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.49nF@50V
  • Total Gate Charge (Qg@Vgs): 80nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.406 grams.

Full Specifications of FDD3670

Model NumberFDD3670
Model Nameonsemi FDD3670
CategoryMOSFETs
Brandonsemi
Description100V 34A 32mΩ@7.3A,10V 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.406 grams / 0.014321 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)34A
Drain Source On Resistance (RDS(on)@Vgs,Id)32mΩ@7.3A,10V
Power Dissipation (Pd)3.8W;83W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.49nF@50V
Total Gate Charge (Qg@Vgs)80nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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