FDD4685 by onsemi – Specifications

onsemi FDD4685 is a FDD4685 from onsemi, part of the MOSFETs. It is designed for 40V 27mΩ@10V,8.4A 69W 3V@250uA 1PCSPChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 8.4A;32A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 27mΩ@10V,8.4A
  • Power Dissipation (Pd): 69W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.38nF@20V
  • Total Gate Charge (Qg@Vgs): 27nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.494 grams.

Full Specifications of FDD4685

Model NumberFDD4685
Model Nameonsemi FDD4685
CategoryMOSFETs
Brandonsemi
Description40V 27mΩ@10V,8.4A 69W 3V@250uA 1PCSPChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.494 grams / 0.017425 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)8.4A;32A
Drain Source On Resistance (RDS(on)@Vgs,Id)27mΩ@10V,8.4A
Power Dissipation (Pd)69W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.38nF@20V
Total Gate Charge (Qg@Vgs)27nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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