onsemi FDD5353 is a FDD5353 from onsemi, part of the MOSFETs. It is designed for 60V 12.3mΩ@10V,10.7A 3V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 11.5A;50A
- Power Dissipation (Pd): 3.1W;69W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 12.3mΩ@10V,10.7A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.215nF@30V
- Total Gate Charge (Qg@Vgs): 65nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.372 grams.
More on FDD5353
Full Specifications of FDD5353
| Model Number | FDD5353 |
| Model Name | onsemi FDD5353 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 12.3mΩ@10V,10.7A 3V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.372 grams / 0.013122 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 11.5A;50A |
| Power Dissipation (Pd) | 3.1W;69W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12.3mΩ@10V,10.7A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 3.215nF@30V |
| Total Gate Charge (Qg@Vgs) | 65nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |