onsemi FDD5680 is a FDD5680 from onsemi, part of the MOSFETs. It is designed for 60V 8.5A 21mΩ@8.5A,10V 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 8.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@8.5A,10V
- Power Dissipation (Pd): 2.8W;60W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.835nF@30V
- Total Gate Charge (Qg@Vgs): 46nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.085 grams.
More on FDD5680
Full Specifications of FDD5680
| Model Number | FDD5680 |
| Model Name | onsemi FDD5680 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 8.5A 21mΩ@8.5A,10V 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.085 grams / 0.002998 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 8.5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 21mΩ@8.5A,10V |
| Power Dissipation (Pd) | 2.8W;60W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.835nF@30V |
| Total Gate Charge (Qg@Vgs) | 46nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |