FDD5810 by onsemi – Specifications

onsemi FDD5810 is a FDD5810 from onsemi, part of the MOSFETs. It is designed for 60V 22mΩ@32A,10V 72W 2V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 7.4A;37A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@32A,10V
  • Power Dissipation (Pd): 72W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.89nF@25V
  • Total Gate Charge (Qg@Vgs): 34nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDD5810

Model NumberFDD5810
Model Nameonsemi FDD5810
CategoryMOSFETs
Brandonsemi
Description60V 22mΩ@32A,10V 72W 2V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)7.4A;37A
Drain Source On Resistance (RDS(on)@Vgs,Id)22mΩ@32A,10V
Power Dissipation (Pd)72W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.89nF@25V
Total Gate Charge (Qg@Vgs)34nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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