FDD5N50FTM by onsemi – Specifications

onsemi FDD5N50FTM is a FDD5N50FTM from onsemi, part of the MOSFETs. It is designed for 500V 3.5A 1.55Ω@1.75A,10V 40W 5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 3.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.55Ω@1.75A,10V
  • Power Dissipation (Pd): 40W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 650pF@25V
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDD5N50FTM

Model NumberFDD5N50FTM
Model Nameonsemi FDD5N50FTM
CategoryMOSFETs
Brandonsemi
Description500V 3.5A 1.55Ω@1.75A,10V 40W 5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252(DPAK)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)3.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.55Ω@1.75A,10V
Power Dissipation (Pd)40W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)650pF@25V
Total Gate Charge (Qg@Vgs)15nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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