IRLS620A by onsemi – Specifications

onsemi IRLS620A is a IRLS620A from onsemi, part of the MOSFETs. It is designed for 200V 4.1A 26W 800mΩ@2.05A,5V 2V@250uA 1PCSNChannel TO-220F MOSFETs ROHS. This product comes in a TO-220F package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 4.1A
  • Power Dissipation (Pd): 26W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@2.05A,5V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 430pF@25V
  • Total Gate Charge (Qg@Vgs): 15nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRLS620A

Model NumberIRLS620A
Model Nameonsemi IRLS620A
CategoryMOSFETs
Brandonsemi
Description200V 4.1A 26W 800mΩ@2.05A,5V 2V@250uA 1PCSNChannel TO-220F MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220F
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)4.1A
Power Dissipation (Pd)26W
Drain Source On Resistance (RDS(on)@Vgs,Id)800mΩ@2.05A,5V
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)430pF@25V
Total Gate Charge (Qg@Vgs)15nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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