FDD6035AL by onsemi – Specifications

onsemi FDD6035AL is a FDD6035AL from onsemi, part of the MOSFETs. It is designed for 30V 12mΩ@12A,10V 3V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 12A;46A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@12A,10V
  • Power Dissipation (Pd): 1.5W;56W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.23nF@15V
  • Total Gate Charge (Qg@Vgs): 18nC@5V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDD6035AL

Model NumberFDD6035AL
Model Nameonsemi FDD6035AL
CategoryMOSFETs
Brandonsemi
Description30V 12mΩ@12A,10V 3V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252(DPAK)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)12A;46A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@12A,10V
Power Dissipation (Pd)1.5W;56W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.23nF@15V
Total Gate Charge (Qg@Vgs)18nC@5V
Operating Temperature-55℃~+175℃@(Tj)

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