onsemi FDD6670A is a FDD6670A from onsemi, part of the MOSFETs. It is designed for 30V 8mΩ@10V,15A 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 15A;66A
- Power Dissipation (Pd): 3.2W;63W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,15A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.755nF@15V
- Total Gate Charge (Qg@Vgs): 22nC@5V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.37 grams.
More on FDD6670A
Full Specifications of FDD6670A
| Model Number | FDD6670A |
| Model Name | onsemi FDD6670A |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 8mΩ@10V,15A 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.370 grams / 0.013051 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 15A;66A |
| Power Dissipation (Pd) | 3.2W;63W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8mΩ@10V,15A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.755nF@15V |
| Total Gate Charge (Qg@Vgs) | 22nC@5V |
| Operating Temperature | -55℃~+175℃@(Tj) |