onsemi FDD6770A is a FDD6770A from onsemi, part of the MOSFETs. It is designed for 25V 4mΩ@24A,10V 3V@250uA 1PCSNChannel DPAK(TO-252) MOSFETs ROHS. This product comes in a DPAK(TO-252) package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 25V
- Continuous Drain Current (Id): 24A;50A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@24A,10V
- Power Dissipation (Pd): 3.7W;65W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.405nF@13V
- Total Gate Charge (Qg@Vgs): 47nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDD6770A
Full Specifications of FDD6770A
| Model Number | FDD6770A |
| Model Name | onsemi FDD6770A |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 25V 4mΩ@24A,10V 3V@250uA 1PCSNChannel DPAK(TO-252) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | DPAK(TO-252) |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 25V |
| Continuous Drain Current (Id) | 24A;50A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4mΩ@24A,10V |
| Power Dissipation (Pd) | 3.7W;65W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2.405nF@13V |
| Total Gate Charge (Qg@Vgs) | 47nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |