FDD6780 by onsemi – Specifications

onsemi FDD6780 is a FDD6780 from onsemi, part of the MOSFETs. It is designed for 25V 8.5mΩ@16.5A,10V 3V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 16.5A;30A
  • Power Dissipation (Pd): 3.7W;32.6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@16.5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.59nF@13V
  • Total Gate Charge (Qg@Vgs): 29nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDD6780

Model NumberFDD6780
Model Nameonsemi FDD6780
CategoryMOSFETs
Brandonsemi
Description25V 8.5mΩ@16.5A,10V 3V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)16.5A;30A
Power Dissipation (Pd)3.7W;32.6W
Drain Source On Resistance (RDS(on)@Vgs,Id)8.5mΩ@16.5A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.59nF@13V
Total Gate Charge (Qg@Vgs)29nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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