FDD8444 by onsemi – Specifications

onsemi FDD8444 is a FDD8444 from onsemi, part of the MOSFETs. It is designed for 40V 145A 5.2mΩ@10V,50A 153W 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 145A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.2mΩ@10V,50A
  • Power Dissipation (Pd): 153W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.195nF@25V
  • Total Gate Charge (Qg@Vgs): 116nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.438 grams.

Full Specifications of FDD8444

Model NumberFDD8444
Model Nameonsemi FDD8444
CategoryMOSFETs
Brandonsemi
Description40V 145A 5.2mΩ@10V,50A 153W 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.438 grams / 0.01545 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)145A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.2mΩ@10V,50A
Power Dissipation (Pd)153W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.195nF@25V
Total Gate Charge (Qg@Vgs)116nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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